i, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 hexfet? transistors irfz2o im-channel 50 volt: power mosfets 50 volt, 0.1 ohm hexfet to-220ab plastic package product summary part number IRFZ20 irfz22 vds 50v 50v rds(on) o.ton 0.12o id 15a 14a the hexfet transistors also offer all of the well established advantages of mosfets such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters. they are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and in systems that are operated from low voltage batteries, such as automotive, portable equipment, etc. features: extremely low rds(on) compact plastic package fast switching low drive current ease of paralleling excellent temperature stability parts per million quality case style and dimensions 10.54(0.415) max. ^-, 15.09 (0.594) max. 13.97 (0.550) max. . 1 3z(ug5i) f 22 (0048) termj- source team 2 -ofuin term i - gate , t i i i i 1 2 79 10 1101 !!9{oosoi^? [7~ 1 section x-x 051100201 i i 04iiooi6i ^_ t^u--i 28sioii4i 2 14 "c 1041 0 sj9jo oj21 068? 10 02)} can style to-220ab dimensions in millimeters and (inches) nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
absolute maximum ratings ' parameter vds drain ? source voltage vgs gata - source tottage pd @ tc ?? 25c max ftjwer dissipation linear derating factor lt_rvi inductive current, clamped tj operating junction and t^tg storage temperature flange lead temperature iwz20 60 h 16 10 60 irfz22 60 60 14 9.0 68 20 40 (see rg. 14) 0.32 (see bg. 14) (see rg. 16 and 60 16) l = loojih 58 -66 to 160 300 (0.063 in. (1.6mm) from case for 10s) unto v v a a a v w vwk? a ?c c electrical characteristics @ tc = 25c (unless otherwise specified) parameter bvoss drain - source breakdown voltage vqs(th) gale threshold yojtago iqss gate-source leakage forward 'gss gate-source leakage reverse iqss zefo gate ^rlsge drain current idlon] on-surle drain current rds(on) static drain-source on-state resistance ? gfg forward transconductance <2> cjgg input capacitance cqss output capacitance 0,53 reverse transfer capacitance ld[on) turn-on delay time t, rise time id/offl turn-off delay time tf fall time qq total gate charge ^ (gate-source plus gate-drain) cug gate-source charge qgd gate-drain ("miller") charge lq internal drain inductance lg internal source inductance type IRFZ20 irfz22 all all all all IRFZ20 irfz22 IRFZ20 irfz22 all all all all all all all all all all all all all mln. 60 60 2.0 - ? ? - 16 14 - - 6.0 - - - - - - - - - - " typ. ? - - - - - - - ? 0.080 0.110 6.0 560 260 60 16 46 20 16 1-2 9.0 3.0 3.5 4.5 7.5 max. ? - 4.0 500 -600 260 1000 ? ? 0.100 0.120 ? 960 350 100 30 90 40 30 17 - - units v v v na na (.a ?a a a 0 a sim pf pf pf ns ns ns ns nc nc nc nh nh nh test conditions vgs = ov id - 250 pa vds - vqs, id = 250 ^a vgs - 2ov vss ? zov vds = max- rating, vgs = ov vds = max. rating x 0.8, vgs = ov, tc - 126c vds > 'dion) " rosionlmax.. vgs - lov vgs ? 10v' 'd " 9-oa vds > loton) x "dstonl max.. id = ?-oa vgs - ov, vds = zsv ? = see rg. 10 vdd ^ 25v, id - s.oa, z,, see rg. 17 (mosfet switching times are operating temperatura) 1.0mh< ? 500 essentially independent of vqs * 10v- id ~ 20a- vds "= -8 max ""ing. see rg. 18 tor test circuit. (gate charge is essentially independent of operating temperature.) measured from the contact screw on tab to center of dia measured from the drain lead, 6mm (0.26 in.) from package to center of dia measured from the source lead, 6mm (0.26 in.) from package to source bonding pad. modified mosfet symbol showing the internal device inductances. thermal resistance r,hjc junction-to-case r\|,cs cese-to-sink fyhja junction-to-ambiervt all all all - - - ? 1.0 - 3.12 - 80 k/ws) k/w ? kav? mounting surface flat smooth, and greased. typical socket mount source-drain diode ratings and characteristics le continuous source current (body diode) icm pulse source current (body diode) (i vsd diode forward voltage ? tf, reverse recovery time qrr reverse recovered charge t^ forward turn-on tim* IRFZ20 irfz22 IRFZ20 irfz22 wfz20 ihfz22 all all all - ? ? ? ? ? - ? - ? ? ? ? ? 100 0.4 16 14 60 56 1.6 1.4 - - a a a a v v ns cc modifiod mosfet symbol showing the integral o reverse p-n junction rectifier. 'f|~"> tc - 26c, is = 16a, vqs - ov tc = 25c, is = "a, vgs - ov tj = 160c, if = 16a, dlpbt - 100a/^ tj = 160c, if = 16a, dtf*it = ihoalia intrinsic turn-on time is negligible. turrvon s|>eod is substantially controlled by lg + ld.
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